Band tail states and the Anderson transition in amorphous silicon
نویسندگان
چکیده
We compute approximations to the electronic states near the gap in a large and realistic model of a-Si. The spatial Ž . structure of the states are computed explicitly and discussed. The properties of the local to extended Anderson transition is described. A qualitative picture of the Anderson transition is described. Implications for conductivity and doping are briefly discussed. q 1998 Elsevier Science B.V. All rights reserved.
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تاریخ انتشار 1997